Surface Mount Glass Passivated Junction Fast Recovery Rectifiers Reverse Voltage 50 to 1000V Forward Current 1.0A

文件：248.32 Kbytes 页数：9 Pages

LRC

乐山无线电

C-Band Power GaAs FET

文件：91.15 Kbytes 页数：4 Pages

EUDYNA

GaAs FET & HEMT Chips

文件：63.41 Kbytes 页数：4 Pages

EUDYNA

L-Band Medium & High Power GaAs FET

DESCRIPTION The FLL107ME is a Power GaAs FET that is specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices. The performance in multitone environments for Class AB operation make them ideally suited for base stat

文件：83.16 Kbytes 页数：4 Pages

EUDYNA