FF4MR12W2M1H_B11中文资料英飞凌数据手册PDF规格书

特性 Features

• Single-channel isolated gate driver

• For use with 600 V/650 V/1200 V/1700 V/2300 V IGBTs, Si and SiC MOSFETs

• Up to 6.5 A typical peak output current

• 45 ns propagation delay with 7 ns part-to-part matching (skew)

• 35 V absolute maximum output supply voltage

• High common-mode transient immunity CMTI > 300 kV/μs

• Separate source and sink outputs with active shutdown and short circuit clamping

• Galvanically isolated coreless transformer gate driver

• 3.3 V and 5 V input supply voltage

• Suitable for operation at high ambient temperature and in fast switching applications

• UL 1577 certification VISO = 3.0 kV (rms) for 1 min