XHP™2 module with CoolSiC™ Trench MOSFET

Features • Electrical features - VDSS = 3300 V - IDN = 500 A / IDRM = 1000 A - Tvj,op = 175°C - Low switching losses - High current density - Low inductive design • Mechanical features - High power density - Package with CTI > 600 - High creepage and clearance distances - AlSiC base pl

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CoolSiC ™ MOSFET 半桥模块 3.3 kV

• CoolSiC™ MOSFET 3.3 kV\n• Integrated body diode\n• XHP™ 2 housing\n• .XT interconnection technology\n\n优势:\n• Energy efficiency\n• High power density\n• Enhanced lifetime\n ;

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FF400R06KE3

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全新原装 质保一年

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