Dual P-Channel 1.8 V Specified PowerTrench MOSFET

General Description This P-Channel –1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Features • –6 A, –12 V. RDS(ON) = 18 mΩ @ VGS = –4.5 V RDS(ON) = 22 mΩ @ VGS = –2.5 V RDS(ON) = 30 mΩ @ VGS = –1.

文件：135.26 Kbytes 页数：5 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDW2508PB Dual P-Channel -1.8V Specified PowerTrench MOSFET -12V, -6A, 18mohm

General Description This P-Channel –1.8V specified MOSFET uses Fairchild Semiconductor’s advanced low voltage PowerTrench®. It has been optimized for battery power management applications. Features ■ Max rDS(on) = 18mΩ at VGS = –4.5V, ID = –6A ■ Max rDS(on) = 22mΩ at VGS = –2.5V, ID = –5A ■ M

文件：450.2 Kbytes 页数：6 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

25 Amp PLASTIC SILICON AUTOMOTIVE RECTIFIERS

文件：140.17 Kbytes 页数：2 Pages

FCI

富加宜

25 Amp PLASTIC SILICON AUTOMOTIVE RECTIFIERS

文件：150.24 Kbytes 页数：2 Pages

FCI

富加宜