FDW2508P...

Dual P-Channel 1.8 V Specified PowerTrench MOSFET

GeneralDescription ThisP-Channel–1.8VspecifiedMOSFETusesFairchild’sadvancedlowvoltagePowerTrenchprocess.Ithasbeenoptimizedforbatterypowermanagementapplications. Features •–6A,–12V.RDS(ON)=18mΩ@VGS=–4.5VRDS(ON)=22mΩ@VGS=–2.5VRDS(ON)=30mΩ@VGS=–1.

FDW2508PB

FDW2508PBDualP-Channel-1.8VSpecifiedPowerTrenchMOSFET-12V,-6A,18mohm

GeneralDescription ThisP-Channel–1.8VspecifiedMOSFETusesFairchildSemiconductor’sadvancedlowvoltagePowerTrench®.Ithasbeenoptimizedforbatterypowermanagementapplications. Features ■MaxrDS(on)=18mΩatVGS=–4.5V,ID=–6A ■MaxrDS(on)=22mΩatVGS=–2.5V,ID=–5A ■M

FR2508

25AmpPLASTICSILICONAUTOMOTIVERECTIFIERS

FR2508

25AmpPLASTICSILICONAUTOMOTIVERECTIFIERS

GAM2508

HighVoltagePressFitDiodesForAutomotive

GB2508BH

FAN-WRAF(PW___F__)

GBJ2508

25AGLASSPASSIVATEDBRIDGERECTIFIER

Features •GlassPassivatedDieConstruction •HighCaseDielectricStrengthof2500VRMS •LowReverseLeakageCurrent •SurgeOverloadRatingto350APeak •IdealforPrintedCircuitBoardApplications •ULListedUnderRecognizedComponent Index,FileNumberE94661 •LeadFreeFinish;

GBJ2508

25AmpGlassPassivatedBridgeRectifier50to1000Volts

Features •LeadFreeFinish/RoHSCompliant(NOTE1)(PSuffix designatesRoHSCompliant.Seeorderinginformation) •Idealforprintedcircuitboard •Lowforwardvoltagedrop,highcurrentcapability. •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •Mounting:T

GBJ2508

SILICONBRIDGERECTIFIERS

PRV:50-1000Volts Io:25Amperes FEATURES: *GlassPassivatedDieConstruction *Highsurgecurrentcapability *Highreliability *Lowreversecurrent *Lowforwardvoltagedrop *Highcasedielectricstrengthof2000VDC *Highcurrentcapability *Verygoodheatdissipation *P

GBJ2508

SinglePhaseBridgeRectifiers

FEATURES *Ratingto1000VPRV *Idealforprintedcircuitboard *Lowforwardvoltagedrop,highcurrentcapability *Reliablelowcostconstructionutilizingmoldedplastic techniqueresultsininexpensiveproduct