FDS8670中文资料仙童半导体数据手册PDF规格书

General Description

This device has been designed specifically to improve the efficiency of DC-DC converters. Using new techniques in MOSFET construction, the various components of gate charge and capacitance have been optimized to reduce switching losses. Low gate resistance and very low Miller charge enable excellent performance with both adaptive and fixed dead time gate drive circuits. Very low Rds(on) has been maintained to provide an extremely versatile device.

特性 Features

• 21 A, 30 V Max RDS(ON) = 3.7 mΩ @ VGS = 10 V Max RDS(ON) = 5.0 mΩ @ VGS = 4.5 V

• High performance trench technology for extremely low RDS(ON) and gate charge

• Minimal Qgd (5.5 nC typical)

• 100 RG tested (0.9 Ω typical)

• 100 UIL tested

• RoHS Compliant

Applications

• High Efficiency DC-DC Converters:

• Notebook Vcore Power Supply

• Telecom Brick Synchronous Rectifier

• Multi purpose Point Of Load