P-channel Enhancement Mode Power MOSFET

Features  VDS= -30V, ID= -12A RDS(ON)

文件：1.69435 Mbytes 页数：5 Pages

BYCHIP

百域芯

P-Channel 30-V (D-S) MOSFET

文件：995.81 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

30 Volt P-Channel PowerTrench MOSFET

This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(O

文件：66.55 Kbytes 页数：5 Pages

FAIRCHILD

仙童半导体

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The GE6679 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications and suited for low voltage applications such as

文件：287.85 Kbytes 页数：4 Pages

GTM

勤益投资控股

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The GE6679 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications and suited for low voltage applications such as

文件：291.99 Kbytes 页数：4 Pages

ETL

亚历电子