FDPC1012S-P

PowerTrench Power Clip 25V Asymetric Dual N-Channel MOSFET; • Q1: N-ChannelMax rDS(on) = 7.0 mΩ at VGS = 4.5 V, ID = 12 AQ2: N-ChannelMax rDS(on) = 2.2 mΩ at VGS = 4.5 V, ID = 23 A\n• Low inductance packaging shortens rise/fall times, resulting in lower switching losses\n• MOSFET integration enables optimum layout for lower circuitinductance and reduced switch node ringing\n• RoHS Compliant;

This device includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET (Q2) have been designed to provide optimal power efficiency.

FFB1012EHE

100x100x38MMSERIES

FL1012

ELECTRICALSPECIFICATIONS

FL1012

LANDISCRETETRANSFORMERMODULES

FL1012NL

ELECTRICALSPECIFICATIONS

FP1012

SILICONSURGESUPPRESSORDIODES

[LEDEX]

FP1012A

SILICONSURGESUPPRESSORDIODES

[LEDEX]

FP1012V

Highfrequency,highcurrentpowerinductors

features •Verticaldesignutilizeslessboardspace •Highcurrentcarryingcapacity •Operatingfrequencyupto3MHz •Inductancerangefrom70nHto470nH •Currentrange22Ato190A •10.0mmx6.0mmfootprintsurfacemount packagein12mmheight •Moisturesensitivitylevel(MSL

FR1012

1AmpGlassPassivatedRectifier1200to2000Volts

Features •LowCost •LowLeakage •LowForwardVoltageDrop •HighCurrentCapability •FastSwitchingSpeedForHighEfficiency •GlassPassivatedJunction

FR1012GP

1AmpGlassPassivatedRectifier1200to2000Volts

Features •LowCost •LowLeakage •LowForwardVoltageDrop •HighCurrentCapability •FastSwitchingSpeedForHighEfficiency •GlassPassivatedJunction