N-Channel Shielded Gate PowerTrench® MOSFET 100V, 80A, 4.85mΩ

This N-Channel MOSFET is produced using an advanced PowerTrench® process thant hasbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. • Shielded Gate MOSFET Technology\n• Max rDS(on) = 4.85 mΩ at VGS = 10 V, ID = 16 A\n• Advanced Package and Silicon combination for low rDS(on) and high efficiency\n• MSL1 robust package design\n• 100% UIL tested\n• RoHS Compliant;

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