Dual N-Channel PowerTrench® MOSFET, 30V, 28A, 2.12mΩ

This package integrates two N-Channel devices connected internally in common-source configuration. This enables very low package parasitics and optimized thermal path to the common source pad on the bottom. It provides a very small footprint (3.3 x 5 mm) for higher power density. • Max rDS(on) = 2.12 mΩ at VGS = 10 V, ID = 28 A\r\n• Max rDS(on) = 2.95 mΩ at VGS = 4.5 V, ID = 24 A\r\n• Ideal for Flexible Layout in Secondary Side Synchronous Rectification\r\n• 100% UIL Tested\r\n• Termination is Lead-free and RoHS compliant;

ONSEMI

安森美半导体

丝印：FDMD8430；Package：Power3.3x5；Dual N-Channel PowerTrench MOSFET

文件：216.6 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

80 Amp Rectifier 20 to 45 Volts Schottky Barrier

Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability

文件：664.94 Kbytes 页数：3 Pages

MCC

8-Channel, Ground /Open, or Supply / Open Sensor

GENERAL DESCRIPTION The HI-8430 is a combined 8-channel discrete-to-digital sensor and quad high side driver fabricated with Silicon-on-Insulator (SOI) technology for robust latch-up free operation. FEATURES • Robust CMOS Silicon-on-Insulator (SOI) technology • 8-channel Selectable Sense Op

文件：289.21 Kbytes 页数：18 Pages

HOLTIC

霍尔特

8-Channel, Ground /Open, or Supply / Open Sensor

GENERAL DESCRIPTION The HI-8430 is a combined 8-channel discrete-to-digital sensor and quad high side driver fabricated with Silicon-on-Insulator (SOI) technology for robust latch-up free operation. FEATURES • Robust CMOS Silicon-on-Insulator (SOI) technology • 8-channel Selectable Sense Op

文件：289.21 Kbytes 页数：18 Pages

HOLTIC

霍尔特