首页 >FDD8447LMOS(场效应管)>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
N-Channel4-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-ChannelPowerTrench짰MOSFET40V,50A,8.7m廓 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
SingleN-ChannelPowerTrenchMOSFET GeneralDescription ThissingleN-ChannelMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrench®processthathasbeenespeciallytailoredtominimizetheon-stateresistanceandyetmaintainsuperiorswitchingperformance. Features ■MaxrDS(on)=10.5mΩatVGS=10V,ID=12 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-Channel100-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-ChannelEnhancementModePowerMOSFET GENERALFEATURES ®Vos=40Vlo=15A Roson | TECHPUBLICTECH PUBLIC Electronics co LTD 台舟电子台舟电子股份有限公司 | TECHPUBLIC | ||
P-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistanceandprovidesuperiorswitchingperformance.Thes | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
P-Channel20-V(D-S)MOSFET | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay |
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