FDD7N20TM-TP技术资料参数原装现货台舟电子-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
FDD7N20TM-TP	文件：994.62 Kbytes Page：3 Pages	丝印：TPM2006NHK3；Package：TO-252-3L；N-Channel MOSFET 200V, 6.0A, 0.65Q Features © Vos =200v + o= 60A + Rosin 50650 @Ves = 10V. 文件：994.62 Kbytes 页数：3 Pages	TECHPUBLIC 台舟电子	TECHPUBLIC
FDU7N20	文件：353.44 Kbytes Page：9 Pages	N-Channel MOSFET 文件：353.44 Kbytes 页数：9 Pages	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQB7N20	文件：691.44 Kbytes Page：9 Pages	200V N-Channel MOSFET 文件：691.44 Kbytes 页数：9 Pages	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQB7N20L	文件：569.02 Kbytes Page：9 Pages	200V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand h 文件：569.02 Kbytes 页数：9 Pages	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild

更多FDD7N20TM-TP供应商更新时间2025-10-6 10:05:00