丝印：301P；Package：SOT23-6；Dual N-Channel Enhancement Mode MOSFET

文件：870.8 Kbytes 页数：3 Pages

TECHPUBLIC

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Dual N-Channel, Digital FET

General Description These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especi

文件：226.61 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Dual N-Channel, Digital FET

文件：351.8 Kbytes 页数：5 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Dual N-Channel MOSFET

■ Features ● VDS (V) = 25V ● ID = 220m A (VGS = 4.5V) ● RDS(ON) 6kV Human Body Model).

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