FDC3601N中文资料PDF规格书
FDC3601N规格书详情
General Description
These N-Channel 100V specified MOSFETs are produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.
These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.
Features
• 1.0 A, 100 V. RDS(ON)= 500 mΩ @ VGS = 10 V RDS(ON)= 550 mΩ @ VGS = 6.0 V
• Low gate charge (3.7nC typical)
• Fast switching speed.
• High performance trench technology for extremely low R DS(ON) .
• SuperSOTTM-6 package: small footprint 72 (smaller than standard SO-8); low profile (1mm thick).
Applications
• Load switch
• Battery protection
• Power management
产品属性
- 型号：
FDC3601N
- 功能描述：
MOSFET Dual N-Ch 100V Spec Power Trench
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON |
2020+ |
SOT23-6 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
ON |
22+ |
SOT23-6 |
9800 |
只做原装正品假一赔十!正规渠道订货! |
询价 | ||
FAIRCHILD |
23+ |
SOT23-6 |
20000 |
原厂原装正品现货 |
询价 | ||
ON/安森美 |
23+ |
SOT23-6 |
45000 |
热卖优势现货 |
询价 | ||
ON/安森美 |
22+ |
N/A |
10000 |
挂了就有,代理分销,TW价优 |
询价 | ||
FAIRCHILD |
20+/21+ |
SOT-163 |
9500 |
全新原装现货 |
询价 | ||
ON(安森美) |
23+ |
NA |
8000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
询价 | ||
ON |
18+21+ |
SOT23 |
18000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
ON |
21+ |
SOT23-6 |
136808 |
原装现货假一赔十 |
询价 | ||
ON |
23+ |
SOT-23-6 |
5500 |
原厂原装正品 |
询价 |
