FDB2570中文资料仙童半导体数据手册PDF规格书

General Description

This N-Channel MOSFET has been designed

specifically for switching on the primary side in the

isolated DC/DC converter application. Any application

requiring a 150V MOSFETs with low on-resistance and

fast switching will benefit.

These MOSFETs feature faster switching and lower

gate charge than other MOSFETs with comparable

RDS(ON)specifications.

The result is a MOSFET that is easy and safer to drive

(even at very high frequencies), and DC/DC power

supply designs with higher overall efficiency.

特性 Features

• 22 A, 150 V. Rds(on)= 80 mΩ@ Vgs= 10V

Rds(on)= 90 mΩ@ Vgs= 6V

• Low gate charge (40nC typical)

• Fast switching speed

• High performance trench technology for extremely low Rds(on)

• 175°C maximum junction temperature rating