首页 >FD2108M>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
HALF-BRIDGEDRIVER | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
HALF-BRIDGEDRIVER | IRF International Rectifier | IRF | ||
HALF-BRIDGEDRIVER Description TheIRS2108/IRS21084arehighvoltage,highspeedpowerMOSFETandIGBTdriverswithdependenthigh-andlow-sidereferencedoutputchannels.ProprietaryHVICandlatchimmuneCMOStechnologiesenableruggedizedmonolithicconstruction.ThelogicinputiscompatiblewithstandardCMOS | IRF International Rectifier | IRF | ||
HALF-BRIDGEDRIVER Description TheIRS2108/IRS21084arehighvoltage,highspeedpowerMOSFETandIGBTdriverswithdependenthigh-andlow-sidereferencedoutputchannels.ProprietaryHVICandlatchimmuneCMOStechnologiesenableruggedizedmonolithicconstruction.ThelogicinputiscompatiblewithstandardCMOS | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
HALF-BRIDGEDRIVER Description TheIRS2108/IRS21084arehighvoltage,highspeedpowerMOSFETandIGBTdriverswithdependenthigh-andlow-sidereferencedoutputchannels.ProprietaryHVICandlatchimmuneCMOStechnologiesenableruggedizedmonolithicconstruction.ThelogicinputiscompatiblewithstandardCMOS | IRF International Rectifier | IRF | ||
HALF-BRIDGEDRIVER Description TheIRS2108/IRS21084arehighvoltage,highspeedpowerMOSFETandIGBTdriverswithdependenthigh-andlow-sidereferencedoutputchannels.ProprietaryHVICandlatchimmuneCMOStechnologiesenableruggedizedmonolithicconstruction.ThelogicinputiscompatiblewithstandardCMOS | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
HALF-BRIDGEDRIVER Description TheIRS2108/IRS21084arehighvoltage,highspeedpowerMOSFETandIGBTdriverswithdependenthigh-andlow-sidereferencedoutputchannels.ProprietaryHVICandlatchimmuneCMOStechnologiesenableruggedizedmonolithicconstruction.ThelogicinputiscompatiblewithstandardCMOS | IRF International Rectifier | IRF | ||
SLIDEDIPSWITCHES | E-SWITCH E-switch | E-SWITCH | ||
ENCODERS | KODENSHIKODENSHI_AUK CORP. 可天士可天士光电子集团 | KODENSHI | ||
PNP(SWITCHINGAPPLICATION) SWITCHINGAPPLICATION(BiasResistorBuiltIn) •Switchingcircuit,Inverter,Interfacecircuit,Drivercircuit •BuiltinbiasResistor(R1=47KΩ,R2=22KΩ) •ComplementtoKSR1108 | SamsungSamsung semiconductor 三星三星半导体 | Samsung |
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