丝印：FCU600N65S3R0；Package：I-PAK；MOSFET ??Power, N-Channel, SUPERFET III, Easy Drive 650 V, 6 A, 600 m

文件：296.28 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

丝印：FCU600N65S3R0；Package：I-PAK；MOSFET ??Power, N-Channel, SUPERFET III, Easy Drive 650 V, 6 A, 600 m

文件：296.28 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 6A@ TC=25℃ ·Drain Source Voltage : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.6Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：364.06 Kbytes 页数：2 Pages

ISC

无锡固电