FCU360N65S3R0数据手册分立半导体产品的晶体管-FETMOSFET-单个规格书PDF

描述 Description

SuperFET® III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SuperFET III MOSFET is very suitable for various power system for miniaturization and higher efficiency.

特性 Features

• 700 V @ TJ = 150 °C
• Higher system reliability at low temperature operation
• Ultra Low Gate Charge (Typ. Qg = 18 nC)
• Lower switching loss
• Low Effective Output Capacitance (Typ. Coss(eff.) = 173 pF)
• Lower switching loss
• Optimized Capacitance
• Lower peak Vds and lower Vgs oscillation
• Internal Gate Resistance: 1 Ω
• Typ. RDS(on) = 310 mΩ
• RoHS Compliant
• 100% Avalanche Tested

应用 Application

• Computing
• Consumer
• Industrial
• Notebook / Desktop computer / Game console
• Telecom / Server
• LCD / LED TV
• LED Lighting / Ballast
• Adapter

简介

FCU360N65S3R0属于分立半导体产品的晶体管-FETMOSFET-单个。由制造生产的FCU360N65S3R0晶体管 - FET，MOSFET - 单个分立式场效应晶体管 (FET) 广泛用于功率转换、电机控制、固态照明及其他应用，它们具有高频开关特性，同时又能承载大电流，使其在这些应用中具备一定优势。这类晶体管广泛应用于要求额定电压为几百伏或更低的应用，如果超出该额定电压值，则 IGBT 等其他器件更具竞争力。