丝印：FCT573A；Package：QSOP-Q；8-BIT LATCHES WITH 3-STATE OUTPUTS

Function and Pinout Compatible With FCT and F Logic Reduced VOH (Typically = 3.3 V) Versions of Equivalent FCT Functions Edge-Rate Control Circuitry for Significantly Improved Noise Characteristics Ioff Supports Partial-Power-Down Mode Operation ESD Protection Exceeds JESD 22 – 2000-V Hu

文件：246.08 Kbytes 页数：13 Pages

TI

德州仪器

丝印：FCT573A；Package：SOIC-SO；8-BIT LATCHES WITH 3-STATE OUTPUTS

Function and Pinout Compatible With FCT and F Logic Reduced VOH (Typically = 3.3 V) Versions of Equivalent FCT Functions Edge-Rate Control Circuitry for Significantly Improved Noise Characteristics Ioff Supports Partial-Power-Down Mode Operation ESD Protection Exceeds JESD 22 – 2000-V Hu

文件：246.08 Kbytes 页数：13 Pages

TI

德州仪器

丝印：FCT573A；Package：SOIC-SO；8-BIT LATCHES WITH 3-STATE OUTPUTS

Function and Pinout Compatible With FCT and F Logic Reduced VOH (Typically = 3.3 V) Versions of Equivalent FCT Functions Edge-Rate Control Circuitry for Significantly Improved Noise Characteristics Ioff Supports Partial-Power-Down Mode Operation ESD Protection Exceeds JESD 22 – 2000-V Hu

文件：246.08 Kbytes 页数：13 Pages

TI

德州仪器

Octal D-type transparent latch with 5-volt tolerant inputs/outputs 3-State

DESCRIPTION The 74LVC573A is a high-performance, low-power, low-voltage, Si-gate CMOS device, superior to most advanced CMOS compatible TTL families. Inputs can be driven from either 3.3V or 5V devices. In 3-State operation, outputs can handle 5V. This feature allows the use of these devices as

文件：102.64 Kbytes 页数：12 Pages

PHI

PHI

Octal D-Type Latch with 3-State Outputs With 5 V?뭈olerant Inputs

The MC74LVX573 is an advanced high speed CMOS octal latch with 3−state outputs. The inputs tolerate voltages up to 7.0 V, allowing the interface of 5.0 V systems to 3.0 V systems. This 8−bit D−type latch is controlled by a latch enable input and an output enable input. When the output enable inpu

文件：102.31 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Schottky Barrier Rectifier

Description: The NTE573 is an axial lead metal–to–silicon power diode using the Schottky Barrier principle. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. This device is ideally suited for use in low–voltage, high–frequency inverters, a

文件：18.88 Kbytes 页数：2 Pages

NTE