FCPF400N80ZL1-F154数据手册ONSEMI中文资料规格书

描述 Description

SuperFET® II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. In addition, internal gate-source ESD diode allows to withstand over 2kV HBM surge stress. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power and industrial power applications.

特性 Features

•Ultra Low Gate Charge (Typ. Qg = 43 nC)
• Ultra narrow lead
•Low Effective Output Capacitance (Typ. Coss(eff.) = 138 pF)
• Ultra narrow lead
•Low Eoss (Typ. 4.1 uJ @ 400 V)
• Ultra narrow lead
•Typ. RDS(on) = 340 mΩ
•100% Avalanche Tested
•RoHS Compliant
•ESD Improved Capability

应用 Application

• Computing
• Consumer
• Industrial
• Notebook / Desktop computer / Game console
• LED Lighting
• Adapter