FCHD040N65S3中文资料功率 MOSFET，N 沟道，SUPERFET® III，Easy Drive，650 V，65 A，40 mΩ，TO-247AD数据手册ONSEMI规格书

描述 Description

SUPERFET III MOSFET is ON Semiconductor’s brand−new high
voltage super−junction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low on−resistance and lower gate
charge performance. This advanced technology is tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate.
Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation.

特性 Features

•700 V @ TJ = 150°C
• Higher system reliability at low temperature operation
•Ultra Low Gate Charge (Typ. Qg = 136 nC)
• Lower switching loss
• Optimized Capacitance
• Lower peak Vds and lower Vgs oscillation
•Low Effective Output Capacitance (Typ. Coss(eff.) = 1154 pF)
• Lower switching loss
•Typ. RDS(on) = 35.4 mΩ
•100% Avalanche Tested
•RoHS Compliant

应用 Application

• Telecommunication
• Cloud system
• Industrial
• Telecom power
• Server power
• EV charger
• Solar / UPS