FCH104N60F-F085中文资料安森美半导体数据手册PDF规格书

厂商型号	FCH104N60F-F085
功能描述	MOSFET – N-Channel, SUPERFET II, FRFET 600 V, 37 A, 104 m
丝印标识	FCH104N60F
封装外壳	TO-247
文件大小	407.9 Kbytes
页面数量	10 页
生产厂商	ONSEMI
中文名称	安森美半导体
网址	网址
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-10-7 20:00:00
人工找货	FCH104N60F-F085价格和库存，欢迎联系客服免费人工找货

描述 Description

SUPERFET® II MOSFET is ON Semiconductor’s brand−new high

voltage super−junction (SJ) MOSFET family that is utilizing charge

balance technology for outstanding low on−resistance and lower gate

charge performance. This technology is tailored to minimize

conduction loss, provide superior switching performance, dv/dt rate

and higher avalanche energy. Consequently SUPERFET II is very

well suited for the Soft switching and Hard Switching topologies like

High Voltage Full Bridge and Half Bridge DC−DC, Interleaved Boost

PFC, Boost PFC for HEV−EV automotive.

SUPERFET II FRFET® MOSFET’s optimized body diode reverse

recovery performance can remove additional component and improve

system reliability.

特性 Features

• Typical RDS(on) = 91 m at VGS = 10 V, ID = 18.5 A

• Typical Qg(tot) = 109 nC at VGS = 10 V, ID = 18.5 A

• UIS Capability

• Qualified to AEC Q101 and PPAP Capable

• This Device is Pb−Free and is RoHS Compliant

Applications

• Automotive On Board Charger

• Automotive DC/DC Converter for HEV