FCH041N60F-F085中文资料安森美半导体数据手册PDF规格书

Description

SUPERFET® II MOSFET is ON Semiconductor’s brand−new high

voltage super−junction (SJ) MOSFET family that is utilizing charge

balance technology for outstanding low on−resistance and lower gate

charge performance. This technology is tailored to minimize

conduction loss, provide superior switching performance, dv/dt rate

and higher avalanche energy. Consequently SUPERFET II is very

well suited for the Soft switching and Hard Switching topologies like

High Voltage Full Bridge and Half Bridge DC−DC, Interleaved Boost

PFC, Boost PFC for HEV−EV automotive. SUPERFET II FRFET®

MOSFET’s optimized body diode reverse recovery performance can

remove additional component and improve system reliability.

Features

• Typical RDS(on) = 36 m at VGS = 10 V, ID = 38 A

• Typical Qg(tot) = 267 nC at VGS = 10 V, ID = 38 A

• Low Effective Output Capacitance (Typical Coss(eff.) = 720 nF)

• 100 Avalanche Tested

• Qualified to AEC Q101 and PPAP Capable

• This Device is Pb−Free and is RoHS Compliant

Applications

• Automotive On Board Charger

• Automotive DC/DC Converter for HEV