FCB099N65S3中文资料安森美半导体数据手册PDF规格书

厂商型号	FCB099N65S3
功能描述	MOSFET ??Power, N-Channel, SUPERFET III, Easy Drive 650 V, 30 A, 99 m
丝印标识	FCB099N65S3
封装外壳	D2-PAK
文件大小	328.06 Kbytes
页面数量	10 页
生产厂商	ON Semiconductor
企业简称	ONSEMI【安森美半导体】
中文名称	安森美半导体公司官网
原厂标识
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-6-30 13:52:00
人工找货	FCB099N65S3价格和库存，欢迎联系客服免费人工找货

Description

SUPERFET III MOSFET is ON Semiconductor’s brand−new high

voltage super−junction (SJ) MOSFET family that is utilizing charge

balance technology for outstanding low on−resistance and lower gate

charge performance. This advanced technology is tailored to minimize

conduction loss, provides superior switching performance, and

withstand extreme dv/dt rate.

Consequently, SUPERFET III MOSFET Easy drive series helps

manage EMI issues and allows for easier design implementation.

Features

• 700 V @ TJ = 150°C

• Typ. RDS(on) = 79 m

• Ultra Low Gate Charge (Typ. Qg = 61 nC)

• Low Effective Output Capacitance (Typ. Coss(eff.) = 544 pF)

• 100 Avalanche Tested

• These Devices are Pb−Free and are RoHS Compliant

Applications

• Telecom / Server Power Supplies

• Industrial Power Supplies

• UPS / Solar