Power MOSFET, 40 A

FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Low RDS(on) • Fully insulated package • UL pending • Compliant to RoHS directive 2002/95/EC • Desi

文件：194.83 Kbytes 页数：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

HEXFET Power MOSFET

Benefits • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dv/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Low RDS(on) • Fully Insulated Package Applications • Switch Mode Power Supply (SMPS) • Uninterrupt

文件：122.07 Kbytes 页数：8 Pages

IRF

Power MOSFET, 40 A

FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Low RDS(on) • Fully insulated package • UL pending • Compliant to RoHS directive 2002/95/EC • Desi

文件：194.83 Kbytes 页数：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

HEXFET Power MOSFET

Infineon

英飞凌