SOT23封装系列超高频低噪声晶体管

Ø FC3356是上海镭芯微电子有限公司生产的超高频低噪声晶体管，采用平面NPN硅外延双极型工艺，具有高功率增益、低噪声系数、大动态范围和理想的电流特性。\nØ 主要应用于VHF，UHF和CATV高频宽带低噪声放大器。在机顶盒、卫星天线、无线通讯、无线遥控和智能玩具等领域广泛运用。\nØ 封装形式：SOT-23/SC-59。\n 

Laseron

镭芯微电子

SC59封装超高频低噪声晶体管

Ø FC3356G是上海镭芯微电子有限公司生产的超高频低噪声晶体管，采用平面NPN硅外延双极型工艺，具有高功率增益、低噪声系数、大动态范围和理想的电流特性。\nØ 主要应用于VHF，UHF和CATV高频宽带低噪声放大器。在机顶盒、卫星天线、无线通讯、无线遥控和智能玩具等领域广泛运用。\nØ 封装形式：SC-59。\n 

Laseron

镭芯微电子

SOT23封装系列超高频低噪声晶体管

Laseron

镭芯微电子

HIGH-Frequency Amplifier Transistor

DESCRIPTION The FTC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. FEATURES • Low Noise and High Gain NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz • High

文件：82.32 Kbytes 页数：4 Pages

FS

HIGH-Frequency Amplifier Transistor

DESCRIPTION The FTC3356U is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. FEATURES ​​​​​​​• We declare that the material of product compliance with RoHS requirements. • Low Noise and High G

文件：85.99 Kbytes 页数：4 Pages

FS

SOT-23

High-Frequency Amplifier Transistor

文件：282.79 Kbytes 页数：3 Pages

GSME

桂微