| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
RadiationHardenedOctalBuffer/LineDriver,Three-State Intersil‘sSatelliteApplicationsFlowTM(SAF)devicesarefullytestedandguaranteedto100kRADtotaldose.TheseQMLClassTdevicesareprocessedtoastandardflowintendedtomeetthecostandshorterlead-timeneedsoflargevolumesatellitemanufacturers,whilemaintainingahighlevelof | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
RadiationHardenedOctalBuffer/LineDriver,Three-State Description TheIntersilHCS244MSisaRadiationHardenedNonInvertingOctalBuffer/LineDriver,Three-State,withtwoactive-lowoutputenables. TheHCS244MSutilizesadvancedCMOS/SOStechnologytoachievehigh-speedoperation.Thisdeviceisamemberofradiationhardened,high-speed,CMOS/SO | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
RadiationHardenedOctalBuffer/LineDriver,Three-State Features •3MicronRadiationHardenedCMOSSOS •TotalDose200KRAD(Si)/s •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •L | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
RadiationHardenedOctalBuffer/LineDriver,Three-State | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
RadiationHardenedOctalBuffer/LineDriver,Three-State Features •3MicronRadiationHardenedCMOSSOS •TotalDose200KRAD(Si)/s •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •L | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
RadiationHardenedOctalBuffer/LineDriver,Three-State Description TheIntersilHCS244MSisaRadiationHardenedNonInvertingOctalBuffer/LineDriver,Three-State,withtwoactive-lowoutputenables. TheHCS244MSutilizesadvancedCMOS/SOStechnologytoachievehigh-speedoperation.Thisdeviceisamemberofradiationhardened,high-speed,CMOS/SO | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
RadiationHardenedOctalBuffer/LineDriver,Three-State | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
RadiationHardenedOctalBuffer/LineDriver,Three-State Features •3MicronRadiationHardenedCMOSSOS •TotalDose200KRAD(Si)/s •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •L | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
RadiationHardenedOctalBuffer/LineDriver,Three-State Description TheIntersilHCS244MSisaRadiationHardenedNonInvertingOctalBuffer/LineDriver,Three-State,withtwoactive-lowoutputenables. TheHCS244MSutilizesadvancedCMOS/SOStechnologytoachievehigh-speedoperation.Thisdeviceisamemberofradiationhardened,high-speed,CMOS/SO | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
RadiationHardenedOctalBuffer/LineDriver,Three-State | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
RadiationHardenedOctalBuffer/LineDriver,Three-State Intersil‘sSatelliteApplicationsFlowTM(SAF)devicesarefullytestedandguaranteedto100kRADtotaldose.TheseQMLClassTdevicesareprocessedtoastandardflowintendedtomeetthecostandshorterlead-timeneedsoflargevolumesatellitemanufacturers,whilemaintainingahighlevelof | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
RadiationHardenedOctalBuffer/LineDriver,Three-State Description TheIntersilHCS244MSisaRadiationHardenedNonInvertingOctalBuffer/LineDriver,Three-State,withtwoactive-lowoutputenables. TheHCS244MSutilizesadvancedCMOS/SOStechnologytoachievehigh-speedoperation.Thisdeviceisamemberofradiationhardened,high-speed,CMOS/SO | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
RadiationHardenedOctalBuffer/LineDriver,Three-State Features •3MicronRadiationHardenedCMOSSOS •TotalDose200KRAD(Si)/s •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •L | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
RadiationHardenedOctalBuffer/LineDriver,Three-State Intersil‘sSatelliteApplicationsFlowTM(SAF)devicesarefullytestedandguaranteedto100kRADtotaldose.TheseQMLClassTdevicesareprocessedtoastandardflowintendedtomeetthecostandshorterlead-timeneedsoflargevolumesatellitemanufacturers,whilemaintainingahighlevelof | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
Octal3-StateNoninvertingBuffer/LineDriver/LineReceiver(High-PerformanceSilicon-GateCMOS) High-PerformanceSilicon-GateCMOS TheSL74HCT244isidenticalinpinouttotheLS/ALS244.ThedevicemaybeusedasalevelconverterforinterfacingTTLorNMOSoutputstoHigh-SpeedCMOSinputs. TheSL74HCT244isanoctalnoninvertingbuffer/linedriver/linereceiverdesignedtobeused | SLSSystem Logic Semiconductor System Logic Semiconductor | SLS | ||
RadiationHardenedOctalBuffer/LineDriver,Three-State Description TheIntersilHCTS244MSisaRadiationHardenedNonInvertingOctalBuffer/LineDriver,Three-State,withtwoactive-lowoutputenables. TheHCTS244MSutilizesadvancedCMOS/SOStechnologytoachievehigh-speedoperation.Thisdeviceisamemberofradiationhardened,high-speed,CMOS/ | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
RadiationHardenedOctalBuffer/LineDriver,Three-State Features •3MicronRadiationHardenedCMOSSOS •TotalDose200KRAD(Si)/s •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •L | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
RadiationHardenedOctalBuffer/LineDriver,Three-State Features •3MicronRadiationHardenedCMOSSOS •TotalDose200KRAD(Si)/s •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •L | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
RadiationHardenedOctalBuffer/LineDriver,Three-State Description TheIntersilHCTS244MSisaRadiationHardenedNonInvertingOctalBuffer/LineDriver,Three-State,withtwoactive-lowoutputenables. TheHCTS244MSutilizesadvancedCMOS/SOStechnologytoachievehigh-speedoperation.Thisdeviceisamemberofradiationhardened,high-speed,CMOS/ | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
RadiationHardenedOctalBuffer/LineDriver,Three-State Intersil‘sSatelliteApplicationsFlowTM(SAF)devicesarefullytestedandguaranteedto100kRADtotaldose.TheseQMLClassTdevicesareprocessedtoastandardflowintendedtomeetthecostandshorterlead-timeneedsoflargevolumesatellitemanufacturers,whilemaintainingahighlevelof | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil |
详细参数
- 型号：
FC244R
- 功能描述：
Analog IC
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FCI |
2020+ |
(BGA) |
2878 |
全新原装现货库存,超低价清仓! |
询价 | ||
FCI |
2022+ |
2449 |
全新原装 货期两周 |
询价 | |||
DN |
2018+ |
SMD |
20000 |
一级代理原装现货假一罚十 |
询价 | ||
DN |
23+ |
QFN |
5 |
大批量供应优势库存热卖 |
询价 | ||
FCI |
2022 |
QFNPB |
2058 |
原厂原装正品,价格超越代理 |
询价 | ||
FCI |
2016+ |
PBF |
5632 |
只做进口原装正品!现货或者订货一周货期!只要要网上有 |
询价 | ||
FCI |
13+ |
smd |
16238 |
原装分销 |
询价 | ||
FCI |
17+ |
QFN32 |
9800 |
只做全新进口原装,现货库存 |
询价 | ||
MAXIM |
23+ |
DIP |
12000 |
全新原装假一赔十 |
询价 | ||
FCI |
22+ |
QFN-32 |
40883 |
原装正品现货 |
询价 |
相关规格书
更多- FC244RF
- FC244UF
- FC24600-0
- FC25
- FC250
- FC2501DR
- FC250A1
- FC250B1
- FC250R
- FC2528
- FC255
- FC-255 32.7680K-A
- FC-255 32.7680K-A3
- FC-255 32.7680K-AG3
- FC-25532.7680K-A3
- FC25B0121
- FC25P-LF
- FC-25PT
- FC25PTI-LF
- FC-25S
- FC25ST
- FC26300-S
- FC-26326-000
- FC26600-0
- FC-26654-000
- FC-26879-000
- FC-27963-000
- FC-285
- FC-2880
- FC28B0071
- FC28B1240
- FC28B1785
- FC28B2480
- FC28B3000
- FC-2A
- FC2A-C10A4
- FC2A-C16A4C
- FC2A-KC4C
- FC2A-KL4C
- FC2A-KP1C
- FC2IMA16C
- FC2SA-12-10AF
- FC2SA-24-10AF
- FC2X2LG2
- FC2XN-06-03AF
相关库存
更多- FC244U
- FC244Y
- FC24600-S
- FC-25
- FC2500PC
- FC250A
- FC250B
- FC250F1
- FC250R1
- FC252U
- FC-255
- FC-255 32.7680K-A0
- FC-255 32.7680KA-A3
- FC-255 32.768KHZ 12.5PF/}20PPM
- FC25B
- FC25P
- FC25PT
- FC25PTI
- FC25S
- FC25S-LF
- FC26300-0
- FC-26314-000
- FC-26465-000
- FC26600-S
- FC-26755-000
- FC270D-10
- FC-28
- FC-2866
- FC-2884
- FC28B0121
- FC28B1729
- FC28B2375
- FC28B2500
- FC28B3012
- FC2A-AD4
- FC2A-C16A1
- FC2A-C24B4
- FC2A-KC6C
- FC2A-KM1C
- FC2-FC4
- FC2-NCDSP-C00-0
- FC2SA-12-10AS
- FC2SA-24-10AS
- FC2X3LG2
- FC2XN-12-10AF
