Power MOSFET

Description Fifth Generation, high current density HEXFETS are paralled into a compact, high power module providing the best combination of switching, ruggedized design, very low ON resistance and cost effectiveness. The isolated SOT-227 package is preferred for all commercial - industrial appli

文件：137.03 Kbytes 页数：8 Pages

IRF

Power MOSFET, 180 A

FEATURES • Fully isolated package • Easy to use and parallel • Very low on-resistance • Dynamic dV/dt rating • Fully avalanche rated • Simple drive requirements • Low drain to case capacitance • Low internal inductance • UL pending • Compliant to RoHS directive 2002/95/EC DESCRIPTION

文件：174.08 Kbytes 页数：9 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET, 180 A

FEATURES • Fully isolated package • Easy to use and parallel • Very low on-resistance • Dynamic dV/dt rating • Fully avalanche rated • Simple drive requirements • Low drain to case capacitance • Low internal inductance • UL pending • Compliant to RoHS directive 2002/95/EC DESCRIPTION

文件：174.08 Kbytes 页数：9 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET, 180 A

文件：189.66 Kbytes 页数：9 Pages

VishayVishay Siliconix

威世威世科技公司

MOSFET N-CH 100V 180A SOT-227

Vishay

威世

Power MOSFET

Infineon

英飞凌

Power MOSFET, 180 A

Vishay

威世

Package：轴向；包装：卷带（TR） 类别：电路保护 TVS - 混合技术 描述：DIODE TVS 180VR 2200W FOLDBACK

Littelfuse

力特