N-channel MOS-FET(500V, 0,38廓, 14A, 190W)

>Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS= ± 30V Guarantee - Repetitive Avalanche Rated >Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier

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FUJI

富士通

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 14A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.38Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

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ISC

无锡固电

N-channel MOS-FET

- High Speed Switching\n- Low On-Resistance\n- No Secondary Breakdown\n- Low Driving Power\n- High Voltage\n- VGS= ± 30V Guarantee\n- Repetitive Avalanche RatedApplications\n- Switching Regulators\n- UPS\n- DC-DC converters\n- General Purpose Power Amplifier;

FUJI

富士通

Square Type

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PANASONIC

松下

Square Type

文件：31.83 Kbytes 页数：1 Pages

PANASONIC

松下

NPN Silicon RF Transistor

DESCRIPTION The START450 is a member of the START family that provide the state of the art of RF silicon process to the market. Manufacturated in the third generation of ST proprietary bipolar process, it offers the best mix of gain and NF for given breakdown voltage(BVceo). It offers performance

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STMICROELECTRONICS

意法半导体