FAM65HR51DS1数据手册分立半导体产品的晶体管-IGBT-模块规格书PDF

描述 Description

OnBoard Charger H-Bridge in APM16 Series for LLC and Phase-shifted DC-DC Converter. 51mOhm SuperFET3 H-Bridge on Al²O³ DBC substrate with 5kV isolation in a compact APM16 transfer molded module

特性 Features

• SIP or DIP H−Bridge Power Module for On−board Charger (OBC) in EV−PHEV
• Enable Design of Small, Efficient and Reliable System for Reduced Vehicle Fuel Consumption and CO2 Emission
• High Voltage Snubber Capacitor for Low Noise at High Voltage Battery
• Simplified Assembly, Optimized Layout, High Level of Integration, and Improved Thermal Performance
• 5 kV/1 sec Electrically Isolated Substrate for Easy Assembly
• integrated Isolation enables compact system design
• Compact Design for Low Total Module Resistance
• Module Serialization for Full Traceability
• Lead Free, RoHS and UL94V−0 Compliant
• Automotive Qualified per AEC Q101 and AQG324 Guidelines

应用 Application

• DC−DC Converter for On−board Charger in EV−PHEV
• On−board Charger in EV−PHEV

简介

FAM65HR51DS1属于分立半导体产品的晶体管-IGBT-模块。由制造生产的FAM65HR51DS1晶体管 - IGBT - 模块绝缘栅双极晶体管 (IGBT) 是三端功率半导体器件，主要用作电子开关，兼具高效率和快速切换优点。作为模块，IGBT 配置为非对称式桥； 升压、降压和制动斩波器；全桥、三电平和三相逆变器。有些器件内置了用于监控温度的 NTC 热敏电阻。IGBT 模块可根据最大功率、集电极电流、集射击穿电压和配置进行区分。