600 V / 4 A, High-Side Automotive Gate Driver IC

Description The FAD7171MX is a monolithic high−side gate drive IC that can drive high−speed MOSFETs and IGBTs that operate up to +600 V. It has a buffered output stage with all NMOS transistors designed for high pulse current driving capability and minimum cross−conduction. onsemi’s high−volt

文件：154.53 Kbytes 页数：11 Pages

ONSEMI

安森美半导体

600V, 4A, SOIC-8,High-Side Gate Drive IC

The FAN7171MX is a monolithic high-side gate drive IC, which can drive high-speed MOSFETs and IGBTs that operate up to +600V. It has a buffered output stage with all NMOS transistors designed for high pulse current driving capability and minimum cross-conduction. Onsemi’s high-voltage process and co • Under− Voltage Lockout for VBS\n• Automotive Qualified to AEC Q100\n• Floating Channel for Bootstrap Operation to +600 V\n• 4 A Sourcing and 4 A Sinking Current Driving Capability\n• Common−Mode dv/dt Noise−Cancelling Circuit\n• 3.3 V and 5 V Input Logic Compatible\n• Output In−phase with Input Si;

ONSEMI

安森美半导体

High-Current High-Side Gate Drive IC

文件：413.32 Kbytes 页数：11 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

High-Current High-Side Gate Drive IC

文件：413.32 Kbytes 页数：11 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

High-Current High-Side Gate Drive IC

文件：413.32 Kbytes 页数：11 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司