FAD3224T中文资料安森美半导体数据手册PDF规格书

描述 Description

The FAD3224 4-A gate driver is designed to drive N-channel

enhancement-mode MOSFETs in low-side switching applications by

providing high peak current pulses during the short switching

intervals. Internal circuitry provides an und-voltage lockout function

by holding the output LOW until the supply voltage is within the

operating range. In addition, the drivers feature matched internal

propagation delays between A and B channels for applications

requiring dual gate drives with critical timing, such as synchronous

rectifiers. This also enables connecting two drivers in parallel to

effectively double the current capability driving a single MOSFET.

The FAD3224 has dual independent enable pins that default to ON if

not connected. If one or both inputs are left unconnected, internal

resistors bias the inputs such that the output is pulled LOW to hold the

power MOSFET OFF.

特性 Features

• Industry-Standard Pinouts

• 4.5 V to 30 V Operating Range

• 5 A Peak Sink / Source at VDD = 12 V

• 4.3 A Sink / 2.8 A Source at VOUT = 6 V

• TTL Input Thresholds

• Internal Resistors Turn Driver Off If No Inputs

• 12 ns / 9 ns Typical Rise/Fall Times (2.2 nF Load)

• Under 20 ns Typical Propagation Delay Matched within 2 ns to the

Other Channel

• Double Current Capability by Paralleling Channels

• Rated from –40 °C to +125 °C Ambient

• Automotive Qualified to AEC-Q100

• FAD3224TMX with 4.5 V UVLO

• FAD3224TUMX with 9 V UVLO

• These are Pb-Free Devices

Applications

• Switch-Mode Power Supplies

• High-Efficiency MOSFET Switching

• Synchronous Rectifier Circuits

• DC-to-DC Converters

• Motor Control

• Automotive-Qualified Systems