Dual N-Channel Enhancement MOSFET

Features • VDS=20V, ID=5A • RDS(ON)=18mΩ@VGS=4.5V(Typ.) • RDS(ON)=24mΩ@VGS=2.5V(Typ.) • High Power and current handing capability • Lead free product is acquired • Surface Mount Package

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GWSEMI

唯圣电子

丝印：8208；Package：CSPC3015-10；Enhancement Mode Power MOSFET

DESCRIPTION The F8208SPK uses advanced trench technology to provide excellent R , low gate charge and operation with gate voltages as low as 2.5V while retaining a 8V V rating. It is ESD protected. This device is suitable for use as a unidirectional or bi-directional load switch, facilitated b

文件：706.66 Kbytes 页数：5 Pages

GWSEMI

唯圣电子

SAW Bandpass Filter

文件：278.1 Kbytes 页数：7 Pages

ITF

RF Filters - Over 200 MHz

ITF