LT6202

2.4GHzLowNoise,LowDistortionDifferentialADCDriverfor300MHzIF

LT6202

1nV/?숰z420MHzGBW,180V/關s,LowDistortionRail-to-RailOutputOpAmps

LT6202

180MHz,1mAPowerEfficientRail-to-RailI/OOpAmps

FEATURES APPLICATIONS nGainBandwidthProduct:180MHz n–3dBFrequency(AV=1):120MHz nLowQuiescentCurrent:1mAMax nHighSlewRate:90V/μs nInputCommonModeRangeIncludesBothRails nOutputSwingsRail-to-Rail nLowBroadbandVoltageNoise:4.2nV/√Hz nPower-DownMode:42μA n

M6202

PlatedSteelLiquidTightCordgrips

MCH6202

DC/DCConverterApplications

MCH6202

DC/DCConverterApplications

PNP/NPNEpitaxialPlanarSiliconTransistors Features •AdoptionofMBITprocesses. •Highcurrentcapacitance. •Lowcollector-to-emittersaturationvoltage. •High-speedswitching. •Ultrasmallpackagefacilitatesminiaturizationinendproducts(mountingheight:0.85mm). •Highallowa

MCH6202

BipolarTransistor(-)30V,(-)1.5A,LowVCE(sat),(PNP)NPNSingleMCPH6

BipolarTransistor (–)30V,(–)1.5A,LowVCE(sat),(PNP)NPNSingleMCPH6 Features •AdoptionofMBITprocesses •Largecurrentcapacity •Lowcollector-to-emittersaturationvoltage •High-speedswitching •Ultrasmallpackagefacilitatesminiaturizationinendproducts(mountingheight:0

MCH6202-TL-E

BipolarTransistor(-)30V,(-)1.5A,LowVCE(sat),(PNP)NPNSingleMCPH6

BipolarTransistor (–)30V,(–)1.5A,LowVCE(sat),(PNP)NPNSingleMCPH6 Features •AdoptionofMBITprocesses •Largecurrentcapacity •Lowcollector-to-emittersaturationvoltage •High-speedswitching •Ultrasmallpackagefacilitatesminiaturizationinendproducts(mountingheight:0

MIS6202

N-Channel30V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •LowOn-Resistance •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •DC/DCConverters,HighSpeedSwitching

MMS6202

MicrominiatureSlideSwitches