HCMOS, 7.5x5mm, 2.85V SMD Oscillator

文件：205.26 Kbytes 页数：2 Pages

FOX

PNP Epitaxial Silicon Transistor

Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=10KΩ, R2=47KΩ) • Complement to FJN3306R

文件：70 Kbytes 页数：4 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Silicon Diode

Description The FMN-4306S is a fast recovery diode of 600 V / 30 A. The maximum trr of 100 ns is realized by optimizing a life-time control. Features ● VRM------------------------------------------------------ 600 V ● IF(AV)-------------------------------------------------------30 A ● VF-----

文件：182.9 Kbytes 页数：4 Pages

Sanken

三垦

Silicon Schottky Barrier Diode

Description The FMW-4306 is a 60 V, 30 A Schottky diode with allowing improvements in VF characteristic. These characteristic features contribute to improving power supply efficiency and to enabling high-frequency systems. Features ● VRSM ------------------------------------------------------ 6

文件：181.32 Kbytes 页数：5 Pages

Sanken

三垦