20A/10A, 12V, 0.060/0.140 Ohm, Logic Level, Complementary Power MOSFET

文件：471.1 Kbytes 页数：14 Pages

Fairchild

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20A/10A, 12V, 0.060/0.140 Ohm, Logic Level, Complementary Power MOSFET

ONSEMI

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20A/10A, 12V, 0.060/0.140 Ohm, Logic Level, Complementary Power MOSFET

文件：471.1 Kbytes 页数：14 Pages

Fairchild

仙童半导体

20A/10A, 12V, 0.060/0.140 Ohm, Logic Level, Complementary Power MOSFET

These complementary power MOSFETs are manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It is designed for use in applications such as swit

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