Power MOSFET(Vdss=100V, Rds(on)=0.025ohm, Id=57A)

VDSS = 100V RDS(on) = 23mΩ ID = 57A Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device desig

文件：184.53 Kbytes 页数：10 Pages

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High Current FET Driver

文件：72.37 Kbytes 页数：4 Pages

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德州仪器

High Current FET Driver

文件：72.37 Kbytes 页数：4 Pages

TI

德州仪器