Power MOSFET(Vdss=100V, Rds(on)=0.025ohm, Id=57A)

VDSS = 100V RDS(on) = 23mΩ ID = 57A Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device desig

文件：184.53 Kbytes 页数：10 Pages

IRF

30V NP Dual Channel MOSFETs

文件：896.5 Kbytes 页数：6 Pages

FS

1U Rackmount Intel짰 Pentium짰 M Processor-based Platform with 4 PCIe LAN Ports

文件：1.10172 Mbytes 页数：2 Pages

ADVANTECH

研华科技

General Purpose Packaging Tape

文件：14.65 Kbytes 页数：2 Pages

3M

Nytye®Mounting Platforms

文件：241.29 Kbytes 页数：1 Pages

HEYCO

Secondary Side Synchronous Post Regulator

文件：226.91 Kbytes 页数：12 Pages

LINER

凌力尔特