F1S40N10数据手册ONSEMI中文资料规格书

描述 Description

These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers and emitter switches for bipolar transistors. These transistors can be operated directly from integrated circuits.

特性 Features

• 40A, 100V
• rDS(ON) = 0.040Ω
• UIS Rating Curve
• SOA is Power Dissipation Limited
• 175°C Operating Temperature
• Related Literature
   - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”