Hyperfast Recovery Power Rectifier

The FFPF10H60S is hyperfast2 rectifier (trr=25ns(Typ.) @ IF=10A). it has half the recovery time of ultrafast rectifier and is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as freewheeling/clamping rectifiers in a variety of switching power

文件：164.11 Kbytes 页数：5 Pages

FAIRCHILD

仙童半导体

Hyperfast Recovery Power Rectifier

ONSEMI

安森美半导体

Hyperfast Recovery Power Rectifier

The FFPF10H60S is hyperfast2 rectifier (trr=25ns(Typ.) @ IF=10A). it has half the recovery time of ultrafast rectifier and is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as freewheeling/clamping rectifiers in a variety of switching power

文件：164.11 Kbytes 页数：5 Pages

FAIRCHILD

仙童半导体

Schottky Barrier Rectifiers

High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequenc

文件：72.45 Kbytes 页数：3 Pages

VISHAYVishay Siliconix

威世威世科技公司

Schottky Barrier Rectifiers

High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequenc

文件：72.45 Kbytes 页数：3 Pages

VISHAYVishay Siliconix

威世威世科技公司