F1076中文资料PDF规格书
F1076规格书详情
General Description
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
Polyfet process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
40Watts Push - Pull
Package Style AQ
HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE
产品属性
- 型号：
F1076
- 制造商：
POLYFET
- 制造商全称：
Polyfet RF Devices
- 功能描述：
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
南京国博 |
23+ |
NA/ |
9070 |
原装现货,当天可交货,原型号开票 |
询价 | ||
南京国博 |
2020+ |
DFN2X2- |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
TI/TEXAS |
23+ |
PLCC-44 |
8931 |
询价 | |||
Sam&wing(芯网) |
23+ |
插件,P=5.08mm |
6000 |
询价 | |||
南京国博 |
21+ |
DFN2X2-8L |
5820 |
原装现货假一赔十 |
询价 | ||
FCT from Molex |
2308+ |
420628 |
一级代理,原装正品,公司现货! |
询价 | |||
南京国博 |
DFN2X2-8L |
265209 |
假一罚十原包原标签常备现货! |
询价 | |||
POLYFET |
16+ |
AM |
3128 |
只有原装!只做原装!一片起卖! |
询价 | ||
TI |
22+ |
DIP-40 |
5000 |
进口原装!现货库存 |
询价 | ||
TriadMagnetics |
新 |
80 |
全新原装 货期两周 |
询价 |
