丝印：11NBTI；Package：16-VFQFPN；Dual Path Ultra-Low Noise Amplifier 2200MHz to 4200MHz

Features • RF range: 2200MHz to 4200MHz o F0109: 650MHz to 1000MHz o F0110: 1500MHz to 2300MHz • 18.5dB typical gain at 2600MHz • 0.55dB typical NF at 2600MHz • +38.5dBm typical OIP3 at 2600MHz • 50Ω Single-ended input/output impedances • +5V power supply • ICC = 45mA per channel • Indep

文件：1.45034 Mbytes 页数：21 Pages

瑞萨

丝印：11NBTI；Package：16-VFQFPN；Dual Path Ultra-Low Noise Amplifier 2200MHz to 4200MHz

Features • RF range: 2200MHz to 4200MHz o F0109: 650MHz to 1000MHz o F0110: 1500MHz to 2300MHz • 18.5dB typical gain at 2600MHz • 0.55dB typical NF at 2600MHz • +38.5dBm typical OIP3 at 2600MHz • 50Ω Single-ended input/output impedances • +5V power supply • ICC = 45mA per channel • Indep

文件：1.45034 Mbytes 页数：21 Pages

瑞萨

I/O Module for DeviceNet 8 digital PNP inputs 8 digital outputs 2 A

■ 8 digital pnp inputs ■ and 8 digital outputs, 24 VDC 2 A ■ Wire-break monitoring ■ Short-circuit monitoring ■ Channel-related diagnostics ■ One channel per connector ■ Separate actuator power supply ■ Fibre-glass reinforced PA6 housing ■ Vibration and shock-resistant ■ Encapsulated modu

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TURCKTurck Inc.

图尔克德国图尔克集团公司

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GaAs-Infrarot-Lumineszenzdiode (950 nm, Enhanced Power) GaAs Infrared Emitting Diode (950 nm, Enhanced Power)

Features • Typ. total radiant power: 24 mW @ 100 mA in TOPLED® package. • Chip size 300 x 300 μm2 • Peak wavelength: 950 nm • Very highly efficient GaAs LED • Good linearity (Ie = f [IF]) at high currents • DC or pulsed operations are possible • High reliability • High pulse handling capa

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Funk-Entst철rfilter im runden Metallgeh채use mit Gewindezapfen

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Funk-Entst철rfilter im ovalen oder rechteckigen Metallgeh채use

文件：96.94 Kbytes 页数：2 Pages

Funk-Entst철rfilter im ovalen oder rechteckigen Metallgeh채use

文件：96.94 Kbytes 页数：2 Pages