Low Pass Filters

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RHOMBUS-IND

N-Channel Enhancement MOSFET

Features  VDS=30V, ID=5.8A  RDS(ON) =18mΩ@VGS=10V(Typ.)  RDS(ON) =27mΩ@VGS=4.5V(Typ.)  High Power and current handing capability  Lead free product is acquired  Surface Mount Package Main Applications  Battery Protection  Load Switch  Power Management

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GWSEMI

唯圣电子

N-Channel Enhancement Mode Power MOSFET

Description TheFNK 3404 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.This device is suitable for use as a load switch and PWM applications. Genera Features VDS = 30V,ID = 5.8A RDS(ON)

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ETCList of Unclassifed Manufacturers

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N-Channel Enhancement Mode Field Effect Transistor

文件：347.95 Kbytes 页数：4 Pages

FS