F-055-C技术资料参数原装现货普莱默-114ic电子网

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零件编号	下载订购	功能描述/丝印	制造商上传企业	LOGO
FG055	文件：77 Kbytes Page：2 Pages	GAUSSIANFILTERS	FaradayFaraday Technology 智原科技智原科技股份有限公司	Faraday
FSF055D	文件：46.64 Kbytes Page：8 Pages	25A,60V,0.020Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul	Intersil Intersil Corporation	Intersil
FSF055R	文件：46.64 Kbytes Page：8 Pages	25A,60V,0.020Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul	Intersil Intersil Corporation	Intersil
FSJ055D	文件：325.07 Kbytes Page：9 Pages	70A,60V,0.012Ohm,RadiationHardened,SEGRResistant,N-ChannelPowerMOSFETs TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K	Intersil Intersil Corporation	Intersil
FSJ055R	文件：325.07 Kbytes Page：9 Pages	70A,60V,0.012Ohm,RadiationHardened,SEGRResistant,N-ChannelPowerMOSFETs TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K	Intersil Intersil Corporation	Intersil
FSYC055D	文件：49.3 Kbytes Page：8 Pages	RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscom	Intersil Intersil Corporation	Intersil
FSYC055R	文件：49.3 Kbytes Page：8 Pages	RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscom	Intersil Intersil Corporation	Intersil
FVDB-055B	文件：248.74 Kbytes Page：3 Pages	ThrrePhaseDoubleStageFilterforInvertersandPowerDrives	PREMOPREMO CORPORATION S.L 普莱默	PREMO
FVDB-055BHV	文件：248.74 Kbytes Page：3 Pages	ThrrePhaseDoubleStageFilterforInvertersandPowerDrives	PREMOPREMO CORPORATION S.L 普莱默	PREMO
FVDT-055B	文件：314.86 Kbytes Page：3 Pages	ThreePhaseDoubleStage	PREMOPREMO CORPORATION S.L 普莱默	PREMO

详细参数

型号：
F-055-C
制造商：
GC Electronics
功能描述：
Screws Sheet Metal Steel Hex Washer Head Slot Drive

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市星辰微电科技有限公司	F0562	IDT/RENESAS	22+	VFQFPN	24500	瑞萨全系列在售	询价
深圳市欧亚佳电子有限公司	F0562NLGI	IDT,	20+	-	1128	无线通信IC,大量现货!	询价
深圳市艾宇欣科技有限公司	F0562NLGI	IDT	1931+	N/A	163	加我qq或微信，了解更多详细信息,体验一站式购物	询价
深圳市科雨电子有限公司	F0562NLGI	IDT	20+	射频元件	155	就找我吧!--邀您体验愉快问购元件!	询价
深圳市威尔健半导体有限公司	F0562NLGI	IDT	23+	QFN68	50000	全新原装正品现货,支持订货	询价
深圳市易讯博科技有限公司	F0562NLGI	IDT	22+	NA	163	加我QQ或微信咨询更多详细信息,	询价
深圳市河锋鑫科技有限公司	F0562NLGI	IDT	22+		9000	原厂渠道,现货配单	询价
深圳市芯福林电子科技有限公司	F0562NLGI	IDT	21+		13880	公司只售原装,支持实单	询价
贸泽芯城（深圳）电子科技有限公司	F0562NLGI	IDT	23+	QFN68	3000	一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、	询价
深圳市得捷芯城科技有限公司	F0562NLGI	IDT	24+	NA/	2174	优势代理渠道,原装正品,可全系列订货开增值税票	询价

更多F-055-C供应商更新时间2025-5-22 9:03:00

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