IGBT-Driving Hybrid ICs

文件：303.45 Kbytes 页数：12 Pages

FUJI

富士通

IGBT-Driving Hybrid ICs

FUJI

富士通

8A 500V N-channel Enhancement Mode Power MOSFET

文件：1.63311 Mbytes 页数：12 Pages

WXDH

东海半导体

8.0 Amp SCHOTTKY BARRIER RECTIFIERS

文件：128.96 Kbytes 页数：2 Pages

FCI

富加宜

P-Channel 2.5V Specified PowerTrench MOSFET

General Description This P-Channel 2.5V specified MOSFET uses a rugged gate PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Features • –10 A, –20 V. RDS(ON) = 12 mΩ @ VGS = –4.5 V RDS(ON) = 17.5 mΩ @ VGS = –2.5 V

文件：78.69 Kbytes 页数：5 Pages

FAIRCHILD

仙童半导体