ExaGrid Tiered Backup Storage

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PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended life

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Polyfet

MHz Range Crystal Unit

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EPSONTOYOCOM

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10 Amp. Glass Passivated Bridge Rectifier

[FAGOR] 10 Amp. Glass Passivated Bridge Rectifier • Glass Passivated Junction • UL recognized under component index file number E130180 • Terminals: FASTON ① • Terminals: WIRE LEADS ② • Max. Mounting Torque: 25 Kg x cm Lead and polarity identifications High surge current capability

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