Half-bridge evaluation board for STGAP3S6S SiC MOSFETs isolated gate driver with protections

Features • Board – Half-bridge configuration – High-voltage rail up to 520 V (limited by the MOSFET’s and capacitor’s rating) – SCTH60N120G2-7 SiC MOSFETs: 1200 V, 52 mΩ, 60 A – Compatible with 5 V and 3.3 V MCUs – VDD logic supplied by onboard-generated 3.3 V or VAUX = 5 V – On-board

文件：1.29978 Mbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

ESD protected N-CHANNEL MOSFET

文件：251.96 Kbytes 页数：6 Pages

CYSTEKEC

全宇昕科技

PROLINE Intern al Componen ts

文件：931.6 Kbytes 页数：8 Pages

PENTAIR

滨特尔

PROLINE Intern al Componen ts

文件：931.6 Kbytes 页数：8 Pages

PENTAIR

滨特尔