首页 >EVKT730-KNOB>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Hall-EffectSensorswithDirectionDetection | MICRONAS Micronas | MICRONAS | ||
N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription thesepowerMOSFETsisdesignedforhighvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrelaydrivers.AndDC-DC&DC-ACConvertersforTelecom,IndustrialandConsumerEnvironment Features •5.5A,400V,RDS(on) | HuashanSHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD 华汕电子器件汕头华汕电子器件有限公司 | Huashan | ||
400VN-ChannelMOSFET FEATURES ❐OriginativeNewDesign ❐SuperiorAvalancheRuggedTechnology ❐RobustGateOxideTechnology ❐VeryLowIntrinsicCapacitances ❐ExcellentSwitchingCharacteristics ❐UnrivalledGateCharge:18nC(Typ.) ❐ExtendedSafeOperatingArea ❐LowerRDS(ON):0.8Ω(Typ.)@VGS=10V ❐ | SEMIHOW SemiHow Co.,Ltd. | SEMIHOW | ||
400VN-ChannelMOSFET Features ❐OriginativeNewDesign ❐VeryLowIntrinsicCapacitances ❐ExcellentSwitchingCharacteristics ❐100AvalancheTested ❐RoHSCompliant | SEMIHOW SemiHow Co.,Ltd. | SEMIHOW | ||
SuperiorAvalancheRuggedTechnology FEATURES ❐OriginativeNewDesign ❐SuperiorAvalancheRuggedTechnology ❐RobustGateOxideTechnology ❐VeryLowIntrinsicCapacitances ❐ExcellentSwitchingCharacteristics ❐UnrivalledGateCharge:17nC(Typ.) ❐ExtendedSafeOperatingArea ❐LowerRDS(ON):0.75Ω(Typ.)@VGS=10V ❐ | SEMIHOW SemiHow Co.,Ltd. | SEMIHOW | ||
SuperiorAvalancheRuggedTechnology | SEMIHOW SemiHow Co.,Ltd. | SEMIHOW | ||
400VN-ChannelMOSFET | SEMIHOW SemiHow Co.,Ltd. | SEMIHOW | ||
400VN-ChannelMOSFET Features ❐OriginativeNewDesign ❐VeryLowIntrinsicCapacitances ❐ExcellentSwitchingCharacteristics ❐100AvalancheTested ❐RoHSCompliant | SEMIHOW SemiHow Co.,Ltd. | SEMIHOW | ||
SuperiorAvalancheRuggedTechnology | SEMIHOW SemiHow Co.,Ltd. | SEMIHOW | ||
SuperiorAvalancheRuggedTechnology | SEMIHOW SemiHow Co.,Ltd. | SEMIHOW |
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