Dual N-Channel High Density Trench MOSFET (20V, 7A)

Eternal

宜源科技

Dual N-Channel Enhancement MOSFET

Features • VDS=20V, ID=5A • RDS(ON)=18mΩ@VGS=4.5V(Typ.) • RDS(ON)=24mΩ@VGS=2.5V(Typ.) • High Power and current handing capability • Lead free product is acquired • Surface Mount Package

文件：229.26 Kbytes 页数：4 Pages

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GreenBridge 2 Series of High-Efficiency Bridge Rectifiers

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PoE-PD Interface Controller, IEEE 802.3bt

文件：396.96 Kbytes 页数：17 Pages

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