Electrostatic MEMS Variable Optical Attenuator

文件：165.75 Kbytes 页数：3 Pages

JDSU

捷迪讯

Electrostatic MEMS Variable Optical Attenuator

文件：165.75 Kbytes 页数：3 Pages

JDSU

捷迪讯

Electrostatic MEMS Variable Optical Attenuator

文件：165.75 Kbytes 页数：3 Pages

JDSU

捷迪讯

Half-Bridge Gate Driver 1200 V 2.5 A Source/3.4 A Sink

Description The FAD8253 is a monolithic half−bridge gate driver IC designed for driving high voltage, high speed and high power IGBTs up to +1200 V. The FAD8253 employs ON’s high−voltage process and common−mode noise canceling technique to provide stable operation of high−side driver under high d

文件：348.99 Kbytes 页数：19 Pages

ONSEMI

安森美半导体