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6045

SINGLEPOLE,SINGLETHROWCONNECTORIZEDSWITCHES

MICRONETICSMicronetics, Inc.

Micronetics, Inc.

APT6045AN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=14.5A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.45Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

APT6045BN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=17A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.45Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

APT6045BN

N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

POWERMOSIV® N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

ADPOW

Advanced Power Technology

APT6045BNR

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=17A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.45Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

APT6045BVFR

POWERMOSV짰FREDFET

MicrosemiMicrosemi Corporation

美高森美美高森美公司

APT6045BVFRG

POWERMOSV짰FREDFET

MicrosemiMicrosemi Corporation

美高森美美高森美公司

APT6045BVR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

POWERMOSV® PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •Fast

ADPOW

Advanced Power Technology

APT6045BVR

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

APT6045CVR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

POWERMOSV® PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •Fast

ADPOW

Advanced Power Technology

APT6045HN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=15.5A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.45Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,D

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

APT6045SVFR

POWERMOSV짰FREDFET

MicrosemiMicrosemi Corporation

美高森美美高森美公司

APT6045SVFRG

POWERMOSV짰FREDFET

MicrosemiMicrosemi Corporation

美高森美美高森美公司

APT6045SVR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

POWERMOSV® PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •Fast

ADPOW

Advanced Power Technology

AS6045

SMTO-8CASCADABLEAMPLIFIER

TELEDYNE

TELEDYNE

ASPI-6045S

WireWoundMagneticallyShieldedSMDPowerInductor

ABRACONAbracon Corporation

阿布雷肯

C6045A

19SP227/30TCPEPVCComputerCable

GENERALGeneral Electric

通用电气公司美国通用电气公司

CBT-BGA-6045

Automatedprobemanufacturingenableslowcostandshortleadtime

IRONWOODIronwood Electronics.

Lronwood电子公司

CLF6045NI-D

InductorsforPowerCircuitsWoundFerrite

FEATURES Magneticshieldtypewoundinductorforpowercircuits. Itcanbeusedatawidetemperaturerange.–55~+150°C(Includingself-temperaturerise) 1to470μH,wideE-6Serieslineupallowsforvarioususages. APPLICATION Equipmentusedforautomobiles(ECM,airbags,headl

TDKTDK Corporation

东电化(中国)投资有限公司

CMRA6045

THEGLOBALEXPERTINSOLIDSTATERELAYTECHNOLOGY

DPASeries •16PinDIPSSR •Ratingsto1A@280VAC •SCRoutput •Voltageorcurrent-controlinput •Zero-crossing(resistiveloads)output

crydomCrydom Inc.,

快达

晶体管资料

  • 型号:

    ESM6045DF

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

    Si-NPN

  • 性质:

    功率放大 (L)

  • 封装形式:

    贴片封装

  • 极限工作电压:

    450V

  • 最大电流允许值:

    84A

  • 最大工作频率:

    <1MHZ或未知

  • 引脚数:

    4

  • 可代换的型号:

  • 最大耗散功率:

    250W

  • 放大倍数:

  • 图片代号:

    G-54

  • vtest:

    450

  • htest:

    999900

  • atest:

    84

  • wtest:

    250

详细参数

  • 型号:

    ESM6045DF

  • 功能描述:

    TRANSISTOR | BJT POWER MODULE | DARLINGTON | 450V V(BR)CEO | 84A I(C)

供应商型号品牌批号封装库存备注价格
ST
专业模块
MODULE
8513
模块原装主营-可开原型号增税票
询价
ST
2023+
MODULE
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
ST
18+
2173
公司大量全新正品 随时可以发货
询价
ST
2022+
MODULE
7300
原装现货
询价
ST
23+
MODULE
7300
专注配单,只做原装进口现货
询价
ST
23+
MODULE
7300
专注配单,只做原装进口现货
询价
ST
07+/08+
ISOTOP
205
询价
ST
23+
模块
3562
询价
ST
23+
模块
350
全新原装正品,量大可订货!可开17%增值票!价格优势!
询价
ST
23+
标准封装
18000
询价
更多ESM6045DF供应商 更新时间2024-4-29 21:56:00