Ultra-Low Capacitance ESD Protection

The ESD7424 is designed to protect voltage sensitive components that require ultra−low capacitance from ESD and transient voltage events. It has industry leading capacitance linearity over voltage making it ideal for RF applications. This capacitance linearity combined with the extremely small

文件：267.07 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Ultra Low On-Resistance

Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.. •

文件：229.68 Kbytes 页数：9 Pages

IRF

P-Channel 30 V (D-S) MOSFET

Description The SOP-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board

文件：349.79 Kbytes 页数：9 Pages

UMW

友台半导体

P-Channel 30 V (D-S) MOSFET

Description The SOP-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board

文件：308.64 Kbytes 页数：9 Pages

EVVOSEMI

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